p p j d 1 0n10 july 9 ,201 5 - rev.00 page 1 1 00 v n - c hannel mosfet v oltage 1 0 0 v c urrent 1 0 a to - 252 f eatures ? r ds(on) , v gs @10v,i d @ 5 a < 13 0 m ? r ds(on) , v gs @ 6 v,i d @ 2 a< 135 m ? high switching speed ? improved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance with eu rohs 2011/65/eu directive . ? green molding compound as p er iec61249 std. (halogen free) m echanical data ? case : to - 252 package ? terminals : solderable per mil - std - 750, method 2026 ? approx. weight : 0.0104 ounces, 0.297 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol limit units drain - source voltage v ds 10 0 v gate - source voltage v gs + 2 5 v continuous drain current t c =25 o c i d 10 a t c = 100 o c 6.5 pulsed drain current (note 1 ) t c =25 o c i dm 40 power dissipation t c =25 o c p d 3 4.7 w t c = 100 o c 14 continuous drain current t a =25 o c i d 2.6 a t a = 70 o c 2.1 a power dissipation t a =25 o c p d 2.0 w power dissipation t a = 70 o c 1.3 single pulse avalanche energy (note 6 ) e as 6 mj operating junction and storage temperature range t j ,t stg - 55~1 50 o c typical thermal resistance (note 4,5 ) junction to case r jc o c /w j unction to ambient r ja 62.5 ? limited only by maximum junction temperature
p p j d 1 0n10 july 9 ,201 5 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 1 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 . 0 2. 7 6 3. 5 v drain - source on - state resistance r ds(on) v gs =10v,i d = 5 a - 110 13 0 m gs = 6 v,i d = 2 a - 12 0 1 35 zero gate voltage drain current i dss v ds = 1 00v,v gs =0v - 0.01 1 .0 ua gate - source leakage current i gss v gs = + 2 0 v,v ds =0v - + 2 0 + 100 na dynamic (note 7 ) total gate charge q g v ds = 37.5 v, i d = 5 a, v gs = 10 v (note 2 , 3 ) - 12 - nc gate - source charge q gs - 3. 1 - gate - drain charge q gd - 2. 2 - input capacitance ciss v ds = 3 0 v, v gs =0v, f=1.0mhz - 707 - pf output capacitance coss - 40 - reverse transfer capacitance crss - 1 6 - turn - on delay time td (on) v d s = 37.5 v, rl=7.5 gs = 10v , r g = 3 (note 2 , 3 ) - 6 - ns turn - on rise time t r - 27 - turn - off delay time td (off) - 15 - turn - off fall time t f - 7 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 1 0 a diode forward voltage v sd i s = 1 a,v gs =0v - 0. 76 1. 0 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics 3. repetitive rating, pulse width limited by junction temperature tj(max)=150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. 4. the maximum current rating is package limited 5. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. m ount ed on a 1 inch 2 with 2oz. square pad of copper . 6. the test condition is l= 0.1 mh, i as = 11 a, v dd = 25 v , v gs = 10 v 7. guaranteed by design, not subject to product ion testing
p p j d 1 0n10 july 9 ,201 5 - rev.00 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body dlode characterlslcs
p p j d 1 0n10 july 9 ,201 5 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage variation vs. temperature fig. 9 threshold voltage variation with temperature . fig. 10 capacitance vs. drain - source voltage . fig. 11 maximum safe operating area
p p j d 1 0n10 july 9 ,201 5 - rev.00 page 5 t ypical characteristic curves fig. 12 normalized thermal transient impedance
p p j d 1 0n10 july 9 ,201 5 - rev.00 page 6 packaging information . to - 252 dimension u nit: mm
p p j d 1 0n10 july 9 ,201 5 - rev.00 page 7 part no packing code version mounting pad layout part n o packing code package type packing type marking ver sion PJD10N10_l2_00001 to - 252 3,000pcs / 13
p p j d 1 0n10 july 9 ,201 5 - rev.00 page 8 disclaimer
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